VMIVME-5521工控備件
影響設(shè)備可靠性
長時間暴露在絕對最大額定條件下可能會影響設(shè)備可靠性。規(guī)范除非另有說明參數(shù)符號測試條件最小典型值。最大單位靜態(tài)漏極源極擊穿電壓 μ 溫度系數(shù)? μ 溫度系數(shù)?柵極源極閾值電壓μ 柵極源漏 零柵極電壓漏極電流 μ 導(dǎo)通狀態(tài)漏極電流 ? 漏極電源接通狀態(tài)電阻 接通 ? 正向跨導(dǎo) ＝ 動態(tài)輸入電容 輸出電容反向轉(zhuǎn)移電容總柵極電荷 ＝ 柵極源極電荷柵極漏極電荷柵極電阻 ? 開啟延遲時間開啟 ? 身份證件? ? 上升時間 關(guān)閉延遲時間關(guān)閉 下降時間 打開延遲時間? 身份證件? ? 上升時間 關(guān)斷延遲時間 下降時間 漏極源極體二極管特性連續(xù)源極漏極二極管電流 脈沖二極管正向電流體二極管電壓 體二極管反向恢復(fù)時間 μ 體二極管反向恢復(fù)電荷 反向恢復(fù)下降時間 反向恢復(fù)上升時間 。
文件編號：有關(guān)技術(shù)問題請聯(lián)系：@本文件如有更改恕不另行通知。此處所述的產(chǎn)品和本文件受上規(guī)定的具體免責(zé)聲明的約束。典型特性除非另有說明電阻輸出特性與漏極電流和柵極電壓柵極電荷轉(zhuǎn)移特性電容導(dǎo)通電阻。結(jié)溫 漏極到源極電壓 漏極電流 到 開導(dǎo)通電阻漏極電壓 總柵極電荷柵極到源極電流 柵極到源極電壓漏極電流 漏極到源極電容 結(jié)溫度標(biāo)準(zhǔn)化開導(dǎo)通電阻 。如有技術(shù)問題請聯(lián)系：@本文件如有更改恕不另行通知。此處所述的產(chǎn)品和本文件受上規(guī)定的具體免責(zé)聲明的約束。
Affecting equipment reliability
Prolonged exposure to absolute maximum ratings may affect equipment reliability. Unless otherwise specified in the specification, the minimum typical value of parameter symbol test condition shall be. Maximum unit static drain source breakdown voltage μ Temperature coefficient ? μ Temperature coefficient ? grid source threshold voltage μ Grid source drain zero grid voltage drain current μ On state drain current ｜ drain power on state resistance on ｜ forward transconductance ＝ dynamic input capacitance output capacitance reverse transfer capacitance total grid charge ＝ grid source charge grid drain charge grid resistance ｜ open delay time open ｜ ID card ｜ rise time close delay time close down time open delay time ｜ ID card ｜ rise time close delay time down time Drain source diode characteristics continuous source drain diode current pulse diode forward current body diode voltage body diode reverse recovery time μ Volume diode reverse recovery Charge reverse recovery falling time Reverse recovery rising time.
Document No.: For technical problems, please contact: @ This document is subject to change without notice. The products described herein and this document are subject to the specific disclaimers set forth above. Typical characteristics Unless otherwise specified, resistance output characteristics and drain current and gate voltage gate charge transfer characteristics capacitance on resistance. Junction temperature drain to source voltage drain current to on resistance drain voltage total grid charge grid to source current grid to source voltage drain current drain to source capacitor junction temperature standardized on resistance. For technical questions, please contact: @ This document is subject to change without notice. The products described herein and this document are subject to the specific disclaimers set forth above.
