EMERSON VE4001S2T1B1控制器
區(qū)塊A位于最高的1MB區(qū)塊，而區(qū)塊B是次高的1MB塊。閃存引導(dǎo)塊開關(guān)用于在引導(dǎo)塊A和引導(dǎo)塊B之間進行選擇。當開關(guān)關(guān)閉時，閃存映射正常，如圖3所示選擇塊A。當開關(guān)打開時，塊B被映射到最高地址，如圖4所示。閃存控制/狀態(tài)寄存器中的MAP_SELECT位可以禁用跳線，并在選擇塊A的情況下將內(nèi)存映射恢復(fù)到正常配置。4.8.1閃存MVME7100設(shè)計用于提供128MB的焊接NOR閃存。兩個AMD+3.3V設(shè)備被配置為以16位模式操作，以形成32位閃存庫。該閃存庫也是引導(dǎo)庫，并連接到LBC芯片選擇0和1。
Block A is located at the highest 1MB block and block B is the next highest 1MB block. A flash boot block switch is used to select between boot block A and boot block B. When the switch is OFF, the flash memory map is normal and block A is selected as shown in Figure 3. When the switch is ON, block B is mapped to the highest address as shown in Figure 4. The MAP_SELECT bit in the flash Control/Status register can disable the jumper and restore the memory map to the normal configuration with block A selected. 4.8.1 Flash Memory The MVME7100 is designed to provide 128MB of soldered-on NOR flash memory. Two AMD +3.3V devices are configured to operate in 16-bit mode to form a 32-bit flash bank. This flash bank is also the boot bank and is connected to LBC Chip Select 0 and 1.
