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BENTLY 330901-05-32-05-02-00電纜

作者:xqt 發(fā)布時間:2022-07-06 17:23:38 次瀏覽

BENTLY 330901-05-32-05-02-00電纜存儲電路板時,如果有電池,則應斷開以延長電池壽命。這在以下方面尤為重要:環(huán)境溫度高。MVME177板,帶備用電池裝運時電池已斷開。電池的電源線暴露在因此,電路板不應放置在導電板上表面或儲存在導電袋中,除非拆下電池。注:鋰電池包含易燃材料例如鋰和有機溶劑。如果電池受到虐待或處理不當可能爆裂并點燃,可能導致受傷和/或火災。BENTLY 330

BENTLY 330901-05-32-05-02-00電纜存儲電路板時,如果有電池,則應斷開以延長電池壽命。這在以下方面尤為重要:環(huán)境溫度高。MVME177板,帶備用電池裝運時電池已斷開。電池的電源線暴露在因此,電路板不應放置在導電板上表面或儲存在導電袋中,除非拆下電池。注:鋰電池包含易燃材料例如鋰和有機溶劑。如果電池受到虐待或處理不當可能爆裂并點燃,可能導致受傷和/或火災。

330901-05-32-05-02-00 -1.jpg

BENTLY 330901-05-32-05-02-00電纜在處理鋰電池時,仔細遵循以下列出的預防措施,以便防止事故:要從模塊中卸下電池,請小心拉動電池從插座。車載DRAMMVME177板載DRAM位于夾層板上。夾層板使用錯誤檢查和糾正(ECC)用于糾正單位錯誤和檢測雙位錯誤的保護。當出現(xiàn)位錯誤時,可以啟用中斷或總線異常檢測。內存夾層的中斷輸出為連接到VMEchip2 PEIRQ*中斷輸入??梢远询B兩塊夾層板,以提供256MB的機載RAM。主板和單個夾層板一起吃一個槽。堆疊配置需要兩VME板槽。DRAM是四路交錯的,以高效地支持緩存突發(fā)周期。DRAM地圖解碼器可以編程以適應不同的基址和夾層板的大小。這個車載DRAM由本地總線重置禁用,必須在可以訪問DRAM之前編程。請參閱單板計算機程序員參考指南中的MCECC有關詳細的編程信息。大多數(shù)DRAM設備在DRAM完全運行之前,需要一些訪問周期操作的通常情況下,車載設備滿足此要求刷新電路和正常DRAM初始化。然而軟件應確保至少10個初始化周期對每個RAM組執(zhí)行。

When a board is stored, if the battery is present, it should be

disconnected to prolong battery life. This is especially important at

high ambient temperatures. MVME177 boards with battery backup

are shipped with the batteries disconnected.

The power leads from the battery are exposed on the solder side of

the board, therefore the board should not be placed on a conductive

surface or stored in a conductive bag unless the battery is removed.

Note Lithium batteries incorporate inflammable materials

such as lithium and organic solvents. If lithium

batteries are mistreated or handled incorrectly, they

may burst open and ignite, possibly resulting in injury

and/or fire. When dealing with lithium batteries,

carefully follow the precautions listed below in order to

prevent accidents:To remove the battery from the module, carefully pull the battery

from the socket.

Onboard DRAM

The MVME177 onboard DRAM is located on a mezzanine board.

The mezzanine boards use error checking and correction (ECC)

protection to correct single-bit errors and detect double-bit errors.

Interrupts or bus exception can be enabled when a bit error is

detected. The interrupt output from the memory mezzanine is

connected to the VMEchip2 PEIRQ* interrupt input.Two mezzanine boards may be stacked to provide 256MB of

onboard RAM. The main board and a single mezzanine board

together take one slot. The stacked configuration requires two

VMEboard slots. The DRAM is four-way interleaved to efficiently

support cache burst cycles.

The DRAM map decoder can be programmed to accommodate

different base address(es) and sizes of mezzanine boards. The

onboard DRAM is disabled by a local bus reset and must be

programmed before the DRAM can be accessed. Refer to the

MCECC in the Single Board Computers Programmer's Reference Guide

for detailed programming information. Most DRAM devices

require some number of access cycles before the DRAMs are fully

operational. Normally this requirement is met by the onboard

refresh circuitry and normal DRAM initialization. However,

software should insure a minimum of 10 initialization cycles are

performed to each bank of RAM. 


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